Patent · US Active

Multi-station decoupled reactive ion etch chamber

US8366829B2 · kind B2 · utility

7Cited by

11References

17Claims

0Family size

Assignee

ADVANCED MICRO-FABRICATION EQUIPMENT INC. · CN

Inventors

Gerald Yin · Cupertino, US
Tuqiang Ni · Fremont, US
Jinyuan Chen · Union City, US
Xueyu Qian · Shanghai, CN

Key dates

Filing date	Jul 2, 2007
Grant date	Feb 5, 2013
Priority date	—
Expiry date	Jan 7, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/334
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A tandem processing-zones chamber having plasma isolation and frequency isolation is provided. At least two RF frequencies are fed from the cathode for each processing zones, where one frequency is about ten times higher than the other, so as to provide decoupled reactive ion etch capability. The chamber body is ground all around and in-between the two processing zones. The use of frequency isolation enables feed of multiple RF frequencies from the cathode, without having crosstalk and beat. A plasma confinement ring is also used to prevent plasma crosstalk. A grounded common evacuation path is connected to a single vacuum pump.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.