Solution for increasing wafer sheet resistance and/or photovoltaic cell power density level
US8366954B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2010 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Jan 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B1/034
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
Treating thin film amorphous or mono- or multi-crystalline silicon wafer substrate for use in a photovoltaic cell, the wafer substrate having at least one of a pn- or np junction and a partial phosphosilicate or borosilicate glass layer on a top surface of the wafer substrate, to increase at least one of (a) the sheet resistance of he wafer and (b) the power density level of the photovoltaic cell made from said wafer. The treatment solution being an acidic treatment solution of a buffered oxide etch (BOE) solution of at least one tetraalkylammonium hydroxide, acetic acid, at least one non-ionic surfactant, at least one metal chelating agent, a metal free source of ammonia, a metal free source, of fluoride ions, and water, mixed with an oxidizer solution and optionally water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.