Structure and method for fabricating a microelectronic device provided with one or more quantum wires able to form one or more transistor channels
US8367487B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2011 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Feb 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6735
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The disclosure concerns a microelectronic device provided with one or more <<quantum wires>>, able to form one or more transistor channels, and optimized in terms of arrangement, shape or/and composition. The invention also uses a method for fabricating said device, comprising the steps of: the forming, in one or more thin layers resting on a support, of a first block and a second block in which at least one transistor drain region and at least one transistor source region are respectively intended to be formed, and of a structure connecting the first block to the second block, and the forming, on the surface of the structure, of wires connecting a first region of the first block with another region of the second block which faces the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.