Manufacturing method of semiconductor device
US8367507B1 · kind B1 · utility
7Cited by
1References
5Claims
0Family size
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Key dates
| Filing date | Feb 24, 2012 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Feb 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device according to the present embodiment includes the steps of forming a metallic silicide film on an n-type impurity region and a p-type impurity region made of silicon carbide (SiC), performing ion implantation of phosphorous (P) into the metallic silicide film on the n-type impurity region, performing a first thermal treatment, performing ion implantation of aluminum (Al) into the metallic silicide film on the p-type impurity region, and performing a second thermal treatment at a temperature lower than the first thermal treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.