Methods and structures for altering strain in III-nitride materials
US8367520B2 · kind B2 · utility
13Cited by
9References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 21, 2009 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Apr 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/187
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and structures for producing semiconductor materials, substrates and devices with improved characteristics are disclosed. Structures and methods for forming reduced strain structures include forming an interface between a support structure surface and a strained semiconductor layer. The support structure is selectively etched to form a plurality of semiconductor islands with reduced levels of strain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.