Semiconductor device manufacturing method
US8367560B2 · kind B2 · utility
1Cited by
1References
18Claims
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Key dates
| Filing date | Jun 10, 2008 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Aug 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device manufacturing method includes the steps of forming a silicate film by performing a first step of forming a metal oxide film on a silicon substrate, and a second step of inducing a solid phase reaction between the metal oxide film and a surface of the silicon substrate by heat treatment, and forming a high dielectric constant insulating film on the silicate film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.