Integrating a capacitor in a metal gate last process
US8368136B2 · kind B2 · utility
7Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2008 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Sep 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/66
Abstract
A semiconductor device is provided which includes a semiconductor substrate having a first region and a second region, transistors having metal gates formed in the first region, and at least one capacitor formed in the second region. The capacitor includes a top electrode having at least one stopping structure formed in the top electrode, the at least one stopping structure being of a different material from the top electrode, a bottom electrode, and a dielectric layer interposed between the top electrode and the bottom electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.