Isolated multigate FET circuit blocks with different ground potentials

US8368144B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Franz Kuttner · Braunau am Inn, AT
• Gerhard Knoblinger · Villach, AT

Key dates

• Filing date: Dec 18, 2006
• Grant date: Feb 5, 2013
• Expiry date: Mar 22, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

An electronic circuit on a semiconductor substrate having isolated multiple gate field effect transistor circuit blocks is disclosed. In some embodiments, an electronic circuit has a substrate having a buried oxide insulating region. A MuGFET device may be formed above the buried oxide region and coupled to a first source of reference potential. A semiconductor device may be formed above the substrate and coupled to a second source of reference potential. A coupling network may be formed to couple the MuGFET device to the semiconductor device.