Non-volatile memory with resistive access component

US8369139B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Jun Liu · 红钢城街道, CN
• Michael P. Violette · Boise, US

Key dates

• Filing date: Jun 13, 2011
• Grant date: Feb 5, 2013
• Expiry date: Jun 13, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8836

Abstract

Some embodiments include apparatus and methods having a memory element configured to store information and an access component configured to allow conduction of current through the memory element when a first voltage difference in a first direction across the memory element and the access component exceeds a first voltage value and to prevent conduction of current through the memory element when a second voltage difference in a second direction across the memory element and the access component exceeds a second voltage value, wherein the access component includes a material excluding silicon.