Optical modulators employing charge state control of deep levels
US8369658B2 · kind B2 · utility
2Cited by
5References
21Claims
0Family size
Inventors
Key dates
| Filing date | Jul 20, 2010 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Jun 6, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2203/48
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method involving: providing an optical waveguide made of a semiconductor material and having a region that is doped by a deep level impurity which creates deep level states in a bandgap in the semiconductor material, the deep level states characterized by an occupancy; passing an optical signal through the optical waveguide and between the region doped by the deep level impurity; and modulating the occupancy of the deep level states to thereby modulate the optical signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.