Andreas Goebel
42Patents
7h-index
32Co-inventors
69Inventor score
Filing activity: Apr 2, 1993 → Sep 26, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8212336B2 | Field effect transistor source or drain with a multi-facet surface | Electricity | 21 | Active |
| US8731017B2 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Electricity | 19 | Active |
| US7760980B2 | Ridge technique for fabricating an optical detector and an optical waveguide | Emerging Cross-Sectional Technologies | 16 | Active |
| US9036672B2 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Electricity | 11 | Active |
| US9362376B2 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Electricity | 10 | Active |
| US9270083B2 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Electricity | 9 | Active |
| US6888639B2 | In-situ film thickness measurement using spectral interference at grazing incidence | Electricity | 8 | Expired |
| US7985689B2 | Patterning 3D features in a substrate | Physics | 7 | Active |
| US9620611B1 | MIS contact structure with metal oxide conductor | Electricity | 7 | Active |
| US5402456A | Nuclear reactor system and method for operating the same | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7680376B2 | Wafer-level alignment of optical elements | Physics | 5 | Active |
| US10170627B2 | Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height | Electricity | 5 | Active |
| USD909896S1 | Optical scanner | General | 4 | Active |
| US10833199B2 | Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height | Electricity | 4 | Active |
| US7505647B2 | Method and apparatus for demultiplexing optical signals in a passive optical network | Physics | 4 | Active |
| US10147798B2 | MIS contact structure with metal oxide conductor | Electricity | 3 | Active |
| US10505047B2 | Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height | Electricity | 3 | Active |
| US10193307B2 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Electricity | 3 | Active |
| US8369658B2 | Optical modulators employing charge state control of deep levels | Physics | 2 | Active |
| US10833194B2 | SOI wafers and devices with buried stressor | Electricity | 1 | Active |
| US7869672B2 | Optical assemblies and methods for fabrication of optical assemblies | Physics | 1 | Active |
| US11462643B2 | Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height | Electricity | 1 | Active |
| US11728624B2 | Tensile strained semiconductor photon emission and detection devices and integrated photonics system | Electricity | 1 | Active |
| US8023782B2 | Method and apparatus for demultiplexing optical signals in a passive optical network | Physics | 1 | Active |
| US10505005B2 | Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.