Method for directional deposition using a gas cluster ion beam
US8372489B2 · kind B2 · utility
8Cited by
15References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 28, 2007 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | May 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0812
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing material on a substrate is described. The method comprises directionally depositing a thin film on one or more surfaces of a substrate using a gas cluster ion beam (GCIB) formed from a source of precursor to the thin film, wherein the deposition occurs on surfaces oriented substantially perpendicular to the direction of incidence of the GCIB, and deposition is substantially avoided on surfaces oriented substantially parallel to the direction of incidence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.