Digital oxide deposition of SiO2 layers on wafers
US8372697B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2007 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Aug 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Novel silicon dioxide and silicon nitride deposition methods are generally disclosed. In one embodiment, the method includes depositing silicon on the surface of a substrate having a temperature of between about 65° C. and about 350° C. The heated substrate is exposed to a silicon source that is substantially free from an oxidizing agent. The silicon on the surface is then oxidized with an oxygen source that is substantially free from a silicon source. As a result of oxidizing the silicon, a silicon oxide layer forms on the surface of the substrate. Alternatively, or in additionally, a nitrogen source can be provided to produce silicon nitride on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.