Semiconductor device and production method therefor
US8372713B2 · kind B2 · utility
10Cited by
33References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2012 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Jul 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0172
Abstract
A method of producing a semiconductor device including a MOS transistor includes steps of forming a plurality of pillar semiconductor layers and forming a gate electrode formed around each of the pillar-shaped semiconductor layers. The method also includes steps of forming a source or drain region in an upper portion of each of the pillar-shaped semiconductor layers and forming a first silicide layer for connecting at least a part of a surface of a drain or source region formed in a planar semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.