Bipolar device having buried contacts
US8372723B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2011 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Aug 31, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/281
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This disclosure, in one aspect, provides a method of manufacturing a semiconductor device that includes forming a collector for a bipolar transistor within a semiconductor substrate, forming a base within the collector, forming a patterned isolation layer over the collector and base, forming an emitter layer over the patterned isolation layer, forming an isolation layer over the emitter layer, patterning the patterned isolation layer, the emitter layer and the isolation layer to form at least one emitter structure having an isolation region located on a sidewall thereof, and forming a buried contact in the collector to a depth sufficient to adequately contact the collector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.