Structures and methods of forming pre fabricated deep trench capacitors for SOI substrates
US8372725B2 · kind B2 · utility
0Cited by
6References
21Claims
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Key dates
| Filing date | Feb 23, 2010 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Oct 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures and methods are provided for forming pre-fabricated deep trench capacitors for SOI substrates. The method includes forming a trench in a substrate and forming a dielectric material in the trench. The method further includes depositing a conductive material over the dielectric material in the trench and forming an insulator layer over the conductive material and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.