Method for fabricating a locally passivated germanium-on-insulator substrate
US8372733B2 · kind B2 · utility
2Cited by
4References
18Claims
0Family size
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Key dates
| Filing date | Sep 2, 2009 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Oct 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for fabricating a locally passivated germanium-on-insulator substrate wherein, in order to achieve good electron mobility, nitridized regions are provided at localised positions. Nitridizing is achieved using a plasma treatment. The resulting substrates also form part of the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.