Electrode of semiconductor device and method for fabricating capacitor
US8372746B2 · kind B2 · utility
6Cited by
0References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2010 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Jan 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
An electrode of a semiconductor device includes a TiCN layer and a TiN layer. A method for fabricating an electrode of a semiconductor device includes preparing a substrate, forming a TiCN layer, and forming a TiN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.