Method for fabricating ultra-fine nanowire
US8372752B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2012 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Jul 6, 2032 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Disclosed herein is a method for fabricating an ultra fine nanowire, which relates to a manufacturing technology of a microelectronic semiconductor transistor. This method obtains a suspended ultra fine nanowire base on a combination of a mask blocking oxidation process and a stepwise oxidation process. A diameter of the suspended ultra fine nanowire fabricated by this method is precisely controlled to 20 nm by controlling a thickness of a deposited silicon nitride film and a time and temperature of the two oxidation process. Since a speed of a dry oxidation process is slower, the size of the final nanowire may be precisely controlled. This method can be used to fabricate an ultra fine nanowire with a lower cost and a higher applicability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.