Plasma processing apparatus and method for plasma processing
US8373086B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2009 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Sep 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.