Semiconductor device and method having trenches in a drain extension region
US8373227B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2009 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Oct 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor device comprises a substrate including a first region and a second region of a first conductivity type and a third region between the first and second regions of a second conductivity type opposite to the first conductivity type, and being covered by a dielectric layer. A plurality of trenches laterally extend between the third and second region, are filled with an insulating material, and are separated by active stripes with a doping profile having a depth not exceeding the depth of the trenches wherein each trench terminates before reaching the dielectric layer and is separated from the third region by a substrate portion such that the respective boundaries between the substrate portions and the trenches are not covered by the dielectric layer. A method for manufacturing such a semiconductor device is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.