Integrated lateral short circuit for a beneficial modification of current distribution structure for xMR magnetoresistive sensors

US8373536B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Juergen Zimmer · Neubiberg, DE
• Thomas Bever · Munich, DE

Key dates

• Filing date: May 25, 2012
• Grant date: Feb 12, 2013
• Expiry date: May 25, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/31663
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

The invention relates to a magnetoresistive device formed to sense an externally applied magnetic field, and a related method. The magnetoresistive device includes a magnetoresistive stripe formed over an underlying, metallic layer that is patterned to produce electrically isolated conductive regions over a substrate, such as a silicon substrate. An insulating layer separates the patterned metallic layer from the magnetoresistive stripe. A plurality of conductive vias is formed to couple the isolated regions of the metallic layer to the magnetoresistive stripe. The conductive vias form local short circuits between the magnetoresistive stripe and the isolated regions of the metallic layer to alter the uniformity of a current flow therein, thereby improving the position and angular sensing accuracy of the magnetoresistive device. In an advantageous embodiment, the metallic layer is formed as electrically conductive stripes oriented at approximately a 45° angle with respect to an axis of the magnetoresistive device.