Grid transparency and grid hole pattern control for ion beam uniformity
US8374830B2 · kind B2 · utility
3Cited by
13References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 2010 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Jan 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J27/024
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A design process for varying hole locations or sizes or both in an ion beam grid includes identifying a control grid to be modified; obtaining a change factor for the grid pattern; and using the change factor to generate a new grid pattern. The change factor is one or both of a hole location change factor or a hole diameter change factor. Also included is an ion beam grid having the characteristic of hole locations or sizes or both defined by a change factor modification of control grid hole locations or sizes or both.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.