Patent · US Active

Method for depositing silicon nitride films and/or silicon oxynitride films by chemical vapor deposition

US8377511B2 · kind B2 · utility

5Cited by

3References

16Claims

0Family size

Assignee

L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventor

Christian Dussarrat · Tokyo, JP

Key dates

Filing date	Apr 3, 2006
Grant date	Feb 19, 2013
Priority date	—
Expiry date	Nov 13, 2027

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23C16/345
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Disclosed are CVD deposition of SiN and SiON films using pentakis(dimethylamino)disilane compounds along with a nitrogen containing gas and optionally an oxygen containing gas.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.