Method of manufacturing back side illuminated imaging device
US8377732B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2010 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Sep 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
In one embodiment, a method of manufacturing a back side illuminated imaging device includes forming a semiconductor detection device and a peripheral circuit device on a semiconductor substrate, and bonding the semiconductor substrate onto a holding substrate via the semiconductor detection device and the peripheral circuit device. The method further includes removing the semiconductor substrate from the holding substrate to transfer the semiconductor detection device and the peripheral circuit device onto the holding substrate. The method further includes forming an amorphous semiconductor layer in which impurities are introduced, on the semiconductor detection device transferred onto the holding substrate, and annealing the amorphous semiconductor layer by using a microwave.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.