Methods of manufacturing semiconductor devices and transistors
US8377779B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 3, 2012 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Jan 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of manufacturing semiconductor devices and transistors are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece comprising a plurality of fins, and forming a semiconductive material over a top surface of the plurality of fins. An etch stop layer is formed over the semiconductive material, and an insulating material is disposed over the etch stop layer. The insulating material and a portion of the etch stop layer are removed from over the plurality of fins. Forming the semiconductive material or forming the etch stop layer are controlled so that removing the portion of the etch stop layer does not remove the etch stop layer between a widest portion of the semiconductive material over the plurality of fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.