Yu-Ping Wang
115Patents
5h-index
117Co-inventors
73Inventor score
Filing activity: Sep 9, 2010 → Jun 3, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8377779B1 | Methods of manufacturing semiconductor devices and transistors | Electricity | 413 | Active |
| US8679925B2 | Methods of manufacturing semiconductor devices and transistors | Electricity | 17 | Active |
| US10529920B1 | Semiconductor device and method for fabricating the same | Electricity | 10 | Active |
| US9379242B1 | Method of fabricating fin field effect transistor | Electricity | 9 | Active |
| US8984006B2 | Systems and methods for identifying hierarchical relationships | Physics | 8 | Active |
| US10276633B1 | Semiconductor device and method of forming the same | Electricity | 5 | Active |
| US9524967B1 | Semiconductor device and method of forming the same | Electricity | 4 | Active |
| US11055463B1 | Systems and methods for gate array with partial common inputs | Physics | 4 | Active |
| US11063206B2 | Semiconductor device and method for fabricating the same | Electricity | 4 | Active |
| US10566520B2 | Magnetoresistive random access memory | Electricity | 3 | Active |
| US10622407B1 | Magnetic memory cell and fabrication method thereof | Physics | 3 | Active |
| US11011210B2 | Memory layout structure | Physics | 3 | Active |
| US10971676B2 | Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region | Electricity | 3 | Active |
| US10608045B2 | Method of forming semiconductor device | Electricity | 2 | Active |
| US10930704B2 | Magnetic memory cell | Physics | 2 | Active |
| US10727397B1 | Magnetoresistive random access memory cell | Electricity | 2 | Active |
| US9412743B2 | Complementary metal oxide semiconductor device | Electricity | 2 | Active |
| US11706996B2 | Magnetoresistive random access memory | Electricity | 2 | Active |
| US10818108B2 | Methods and systems for vehicle management | Physics | 2 | Active |
| US9721840B2 | Method of forming complementary metal oxide semiconductor device with work function layer | Electricity | 2 | Active |
| US11877520B2 | Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region | Electricity | 1 | Active |
| US11018184B2 | Magnetoresistive random access memory with particular shape of dielectric layer | Electricity | 1 | Active |
| US11387408B2 | Magnetoresistive random access memory and method of manufacturing the same | Electricity | 1 | Active |
| US11508904B2 | Semiconductor device and method for fabricating the same | Electricity | 1 | Active |
| US11950513B2 | Semiconductor device and method for fabricating the same | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.