Contact formation
US8377819B2 · kind B2 · utility
0Cited by
14References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2011 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Sep 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure includes various methods of contact embodiments. One such method embodiment includes forming a trench in an insulator stack material of a particular thickness. This method includes forming a filler material in the trench and removing the filler material to a particular depth that is less than the particular thickness of the insulator stack material. This method also includes forming a spacer material on at least one side surface of the trench to the particular depth of the filler material and forming a conductive material in the trench over the filler material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.