Semiconductor device and manufacturing method thereof
US8377822B2 · kind B2 · utility
0Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2010 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Dec 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure having a cap layer formed over a metalized dielectric layer is formed by depositing manganese on the surface of the metalized dielectric layer. The deposited manganese serves as a first cap layer to remove oxidation on the surface of the metalized dielectric layer. The presence of oxidation on the surface of the metalized dielectric layer can be delirious for performance of a device constructed out of the semiconductor structure. A second cap layer is then formed by depositing silicon carbide or nitrogen enriched silicon carbide over the first cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.