Vertical light-emitting diode
US8378376B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2010 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Nov 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
The present application describes a vertical light-emitting diode (VLED) and its manufacture method that use the combination of a reflective layer, a transparent conducting layer and transparent dielectric layer as structural layers for promoting uniform current distribution and increasing light extraction. In the VLED, a transparent conducting layer is formed on a first outer surface of a stack of multiple group III nitride semiconductor layers. A transparent dielectric layer is then formed on a side of the transparent conducting layer opposite the side of the multi-layer structure. A first electrode structure is then formed on the transparent dielectric layer in electrical contact with the transparent conducting layer via a plurality of contact windows patterned through the transparent dielectric layer. The transparent conducting layer and the transparent dielectric layer are used as structural layers for improving light extraction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.