Methods of fabricating field effect transistors having protruded active regions
US8378395B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2010 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Jan 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/608
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a field effect transistor, a method of manufacturing the same, and an electronic device including the field effect transistor. The field effect transistor may have a structure in which a double gate field effect transistor and a recess channel array transistor are formed in a single transistor in order to improve a short channel effect which occurs as field effect transistors become more highly integrated, a method of manufacturing the same, and an electronic device including the field effect transistor. The field effect transistor can exhibit stable device characteristics even when more highly integrated in such a manner that both the length and width of a channel increase and particularly the channel can be significantly long, and can be manufactured simply.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.