Solid state imaging device
US8378400B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2011 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Oct 31, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
An island-shaped semiconductor constituting a pixel includes a first semiconductor N+-region formed on a substrate, a second semiconductor P-region formed on the region, third semiconductor N-regions formed on upper lateral sides of the region, insulating layers formed on the outer periphery of the regions and lower lateral sides of the region, gate conductive layers formed on the outer periphery of the insulating layers and functioning as gate electrodes forming a channel in a lower area of the region, light-reflection conductive layers formed on the outer periphery of the N regions and a portion of the insulating layers where the gate conductive layers are not formed, a fifth semiconductor P+-region formed on the region and the regions, and a microlens formed on the region and whose focal point is located near the upper surface of the region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.