High speed IGBT

US8378427B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventor

• Xingbi Chen · Chengdu, CN

Key dates

• Filing date: Feb 25, 2010
• Grant date: Feb 19, 2013
• Expiry date: Jun 25, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/60

Abstract

An IGBT with almost no tail during turning-off is formed by connection of both the base and the emitter of the BJT of the IGBT at the bottom of the chip to two regions in an area of the top surface of the chip. The two regions keep non-depleted even under a maximum voltage being applied across the collector and the base of the BJT. The current through the two regions can be controlled by a gate voltage of a place close to the active region of the MISFET of the IGBT through a surface voltage-sustaining region. The injection efficiency of minorities of the IGBT can thus be controlled.