Method for manufacturing semiconductor device, semiconductor device, semiconductor manufacturing apparatus and storage medium
US8378464B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2010 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | May 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes steps of: (a) forming a thin film containing a phenyl group and silicon on a substrate while obtaining a plasma by activating an organic silane gas containing a phenyl group and silicon and nitrogen as not original component but unavoidable impurity and exposing the substrate to the plasma, temperature of the substrate being set at 200° C. or lower; and (b) obtaining a low-permittivity film by supplying energy to the substrate to allow moisture to be released from the thin film. With this method for manufacturing the semiconductor device, it is possible to obtain a silicon-oxide based low-permittivity film containing an organic substance which is not significantly damaged by the release of the organic substance when subjected to a plasma treatment such as an etching treatment, an ashing treatment, and/or the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.