Semiconductor structure with galvanically-isolated signal and power paths
US8378776B1 · kind B1 · utility
14Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2011 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Aug 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A galvanic die has signal structures and a transformer structure that provide galvanically-isolated signal and power paths for a high-voltage die and a low-voltage die, which are both physically supported by the galvanic die and electrically connected to the signal and transformer structures of the galvanic die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.