Domain wall motion element and magnetic random access memory
US8379429B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2009 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Sep 8, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1143
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A domain wall motion element has a magnetic recording layer 10 that is formed of a ferromagnetic film and has a domain wall DW. The magnetic recording layer 10 has: a pair of end regions 11-1 and 11-2 whose magnetization directions are fixed; and a center region 12 sandwiched between the pair of end regions 11-1 and 11-2, in which the domain wall. DW moves. A first trapping site TS1 by which the domain wall DW is trapped is formed at a boundary between the end region 11-1, 11-2 and the center region 12. Furthermore, at least one second trapping site TS2 by which the domain wall DW is trapped is formed within the center region 12.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.