Patent · US Active

Command control for synchronous memory device

US8380917B2 · kind B2 · utility

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20Claims
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Assignee

Inventors

Key dates

Filing dateJun 12, 2008
Grant dateFeb 19, 2013
Priority date
Expiry dateFeb 7, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C7/1072
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Systems, methods, and circuits for command control for synchronous memory device are disclosed. In one embodiment, a memory device comprises a first synchronous memory controlled by a second group of commands which includes a first command receiving section for receiving a first group of commands, and a second command receiving section for receiving a command that is unique to the first synchronous memory and different from the first group of commands during execution of the first group of commands received by the first command receiving section. The synchronous memory further comprises a second synchronous memory controlled by the first group of commands, where the first synchronous memory and the second synchronous memory are coupled to a same data bus, and where the second group of commands is different from the first group of commands.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.