Resists for lithography
US8383316B2 · kind B2 · utility
12Cited by
15References
109Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2007 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Jun 21, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31504
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
New routes involving multi-step reversible photo-chemical reactions using two-step techniques to provide non-linear resist for lithography are described in this disclosure. They may provide exposure quadratically dependant on the intensity of the light. Several specific examples, including but not limited to using nanocrystals, are also described. Combined with double patterning, these approaches may create sub-diffraction limit feature density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.