Semiconductor device and method for manufacturing the same
US8383452B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2011 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Jun 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include depositing a first amorphous film having a first impurity, depositing a third amorphous lower-layer film on the first amorphous film, forming microcrystals on the third amorphous lower-layer film, depositing a third amorphous upper-layer film on the third amorphous lower-layer film to cover the microcrystals, depositing a second amorphous film having a second impurity on the third amorphous upper-layer film, and radiating microwaves to crystallize the third amorphous lower-layer film and the third amorphous upper-layer film to form a third crystal layer, and crystallize the first amorphous film and the second amorphous film to form a first crystal layer and a second crystal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.