Patent · US Active

Epitaxial process for forming semiconductor devices

US8383485B2 · kind B2 · utility

6Cited by
15References
13Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 13, 2011
Grant dateFeb 26, 2013
Priority date—
Expiry dateJul 13, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/038
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method for forming a semiconductor device such as a MOSFET. The method includes forming gate electrode pillars on a silicon substrate via material deposition and etching. Following the etching step to define the pillars, an epitaxial silicon film is grown on the substrate between the pillars prior to forming recesses in the substrate for the source/drain regions of the transistor. The epitaxial silicon film compensates for substrate material that may be lost during formation of the gate electrode pillars, thereby producing source/drain recesses having a configuration amenable to be filled uniformly with silicon for later forming the source/drain regions in the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.