Patent · US Active

Production of semiconductor devices

US8383493B2 · kind B2 · utility

4Cited by
5References
18Claims
0Family size

Inventor

Key dates

Filing dateJan 31, 2008
Grant dateFeb 26, 2013
Priority date—
Expiry dateJan 31, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/0265
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of producing a layered semiconductor device comprises the steps of: (a) providing a base comprising a plurality of semiconductor nano-structures, (b) growing a semiconductor material onto the nano-structures using an epitaxial 5 growth process, and (c) growing a layer of the semiconductor material using an epitaxial growth process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.