Methodology for wordline short reduction
US8383515B2 · kind B2 · utility
1Cited by
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10Claims
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Key dates
| Filing date | Nov 16, 2010 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Nov 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method of forming a wordline is provided in the present invention. The proposed method includes steps of: (a) providing a plurality of SASTIs with a plurality of first POLY cells deposited thereon; and (b) depositing a first fill-in material having a relatively high etching rate oxide-like material in the plurality of SASTIs and on each side wall of the plurality of first POLY cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.