Electron beam lithography apparatus and electron beam lithography method
US8384052B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2010 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Feb 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/21
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron beam lithography apparatus includes an electron gun emitting an electron beam, a deflector deflecting the electron beam, a focus corrector correcting a focus of the electron beam, a storage unit storing exposure data, and a controller correcting the exposure data based on a constant correction coefficient independent of time passage and a fluctuating correction coefficient changing with time, calculates a deflection efficiency indicating a relation between an input signal to the deflector and an amount of beam deflection, and a correction intensity indicating a relation between an input signal to the focus corrector and a beam focus, and writes the electron beam on a sample according to the deflection efficiency and the correction intensity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.