Thin film transistor and method of fabricating the same
US8384075B2 · kind B2 · utility
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4References
17Claims
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Key dates
| Filing date | Jun 13, 2012 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Jun 13, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/762
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.