Field effect transistor using oxide semicondutor and method for manufacturing the same
US8384077B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2008 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Aug 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3):In/(In+Zn)=0.2 to 0.8 (1)In/(In+Ga)=0.59 to 0.99 (2)Zn/(Ga+Zn)=0.29 to 0.99 (3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.