Thin-film transistor having high adhesive strength between barrier film and drain electrode and source electrode films
US8384083B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 24, 2009 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Sep 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
Abstract
This thin-film transistor includes adhesive strength enhancing films between a barrier film and electrode films. Each of the adhesive strength enhancing film is composed of two zones including (a) a pure copper zone that is formed on the electrode film side, and (b) a component concentrated zone that is formed in an interface portion contact with the barrier film, and that includes Cu, Ca, oxygen, and Si as constituents. In concentration distributions of Ca and oxygen in a thickness direction of the component concentrated zone, a maximum content of Ca of a Ca-containing peak is in a range of 5 to 20 at %, and a maximum content of oxygen of an oxygen-containing peak is in a range of 30 to 50 at %, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.