Transistor with enhanced channel charge inducing material layer and threshold voltage control

US8384129B2 · kind B2 · utility

Assignee

• United States of America as represented by the Secretary of the Air Force · US

Inventors

• Francis J. Kub · Arnold, US
• Karl D. Hobart · Alexandria, US
• Charles R. Eddy, Jr. · Columbia, US
• Michael A. Mastro · Fairfax, US
• Travis J. Anderson · Alexandria, US

Key dates

• Filing date: Jun 25, 2010
• Grant date: Feb 26, 2013
• Expiry date: Oct 15, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518

Abstract

High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.