Semiconductor device and a reverse conducting IGBT
US8384151B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 17, 2011 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Mar 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A semiconductor device is provided. The semiconductor device includes a semiconductor body with a base region and a first electrode arranged on a main horizontal surface of the semiconductor body. The semiconductor body further includes an IGBT-cell with a body region forming a first pn-junction with the base region, and a diode-cell with an anode region forming a second pn-junction with the base region. A source region in ohmic contact with the first electrode and an anti-latch-up region in ohmic contact with the first electrode are, in a vertical cross-section, only formed in the IGBT-cell. The anti-latch-up region has higher maximum doping concentration than the body region. Further a reverse conducting IGBT is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.