Semiconductor device and manufacturing method of the same
US8384153B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2011 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Jul 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
A semiconductor device includes: a substrate; multiple first and second conductive type regions on the substrate for providing a super junction structure; a channel layer on the super junction structure; a first conductive type layer in the channel layer; a contact second conductive type region in the channel layer; a gate electrode on the channel layer via a gate insulation film; a surface electrode on the channel layer; a backside electrode on the substrate opposite to the super junction structure; and an embedded second conductive type region. The embedded second conductive type region is disposed in a corresponding second conductive type region, protrudes into the channel layer, and contacts the contact second conductive type region. The embedded second conductive type region has an impurity concentration higher than the channel layer, and has a maximum impurity concentration at a position in the corresponding second conductive type region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.