Junction barrier schottky rectifiers having epitaxially grown P+-N methods of making
US8384182B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2008 |
| Grant date | Feb 26, 2013 |
| Priority date | — |
| Expiry date | Jun 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A junction barrier Schottky (JBS) rectifier device and a method of making the device are described. The device comprises an epitaxially grown first n-type drift layer and p-type regions forming p+-n junctions and self-planarizing epitaxially over-grown second n-type drift regions between and, optionally, on top of the p-type regions. The device may include an edge termination structure such as an exposed or buried P+ guard ring, a regrown or implanted junction termination extension (JTE) region, or a “deep” mesa etched down to the substrate. The Schottky contact to the second n-type drift region and the ohmic contact to the p-type region together serve as an anode. The cathode can be formed by ohmic contact to the n-type region on the backside of the wafer. The devices can be used in monolithic digital, analog, and microwave integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.